Discharge frequency and reagents choice effects on robustness of silicon nitride (Si3N4) thin layers deposited by PECVD (Plasma-Enhanced Chemical Vapor Deposition) - Mines Paris Accéder directement au contenu
Communication Dans Un Congrès Année : 2017

Discharge frequency and reagents choice effects on robustness of silicon nitride (Si3N4) thin layers deposited by PECVD (Plasma-Enhanced Chemical Vapor Deposition)

Karim Inal
Alain Burr
Rodolphe Cauro
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hal-01721378 , version 1 (02-03-2018)

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  • HAL Id : hal-01721378 , version 1

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Catheline Cazako, Karim Inal, Alain Burr, Frédéric Georgi, Rodolphe Cauro. Discharge frequency and reagents choice effects on robustness of silicon nitride (Si3N4) thin layers deposited by PECVD (Plasma-Enhanced Chemical Vapor Deposition). European Conference on Heat Treatment and Surface Engineering, Jun 2017, Nice, France. ⟨hal-01721378⟩
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